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1.
Rewari  Sonam  Nath  Vandana  Haldar  Subhasis  Deswal  S. S.  Gupta  R. S. 《Microsystem Technologies》2019,25(5):1537-1546
Microsystem Technologies - In this paper a cylindrical Dual Metal (DM) Dielectric Engineered (DE) Gate All Around (GAA) MOSFET has been proposed to resolve a big issue of Gate Inducted Drain...  相似文献   
2.
Three-dimensional (3D) YBO3:Tb3+ flower-like and dense flower-like hierarchitecture constituted of nanoflakes are solvothermally synthesized in the presence of polyborate precursors in the mixture of ethanol and water. The growth process of the YBO3:Tb3+ flowers and dense flowers was explored based on the time-dependent experiment and the results showed that the growth mechanism follows an in situ growth rather than self-assembly process as reported previously. YBO3:Tb3+ morphologies composed of nanoflakes are achieved by controlling the concentration of ethanol and dependence of photoluminescence on morphology was studied. Remarkable photoluminescence enhancement was observed for YBO3:Tb3+ with flower-like morphology demonstrating the potential of the microstructure in future applications as a green phosphor. Such a synthetic method and growth mechanism may be applied to fabricate complex 3D architectures of other materials.  相似文献   
3.
4.
The structural and morphological characterizations of a chalcopyrite concentrate, collected from the Indian Copper Complex, Ghatshila, India, were carried out by X-ray diffraction, scanning electron mi...  相似文献   
5.
Wireless Personal Communications - In this paper a combination of rectangular and elliptical fractal geometry is applied on a regular hexagonal wide slot antenna fabricated using a FR4 substrate to...  相似文献   
6.
Russian Journal of Nondestructive Testing - Nitrile rubbers, also known as Nitrile-Butadiene rubbers, belong to the category of synthetic rubbers and are a better choice as materials for...  相似文献   
7.
Gold nanoparticles (AuNPs) of about 5 nm in diameter were biosynthesized at room temperature (300 K). The PVA/2.5 wt% KH2PO4 or KDP composite film and PVA/2.5 wt% KDP/AuNPs nanocomposite films with different concentrations of AuNPs were prepared. Interestingly, addition of 0.05 wt% of AuNPs to the PVA/2.5 wt% KDP percolative composite film destroys percolative behavior of this composite film. Furthermore, the PVA/2.5 wt% KDP/0.05 wt% AuNPs nanocomposite film exhibited high room temperature dielectric permittivity (ε′ ∼ 590 at 1 kHz). The behavior of AC conductivity (σac) of the nanocomposite films indicated correlated barrier hopping type of conduction mechanism. The Cole–Davidson dielectric response becomes evident as the interfacial polarization process acquires a more symmetric form, tending to Debye relaxation. High value of ε′ promises direct application in capacitors. Moreover, the novel feature of destroying the percolative behavior by AuNPs may be applied even in other systems.  相似文献   
8.
A mode acceleration formulation is presented to investigate the variability in the response of a secondary system which is supported on a flexible-base primary system at multiple attachment points. The response functions are considered to be uncertain due to uncertainties in the values of shear wave velocity and Poisson’s ratio of the foundation soil. Both soil parameters are assumed to be statistically independent variables with Gaussian distributions. A numerical study with the help of an example primary-secondary (P–S) system shows that dynamic response should be ignored only for very stiff secondary modes, say > 7 times as stiff as the dominant mode of the primary system, for the proposed formulation to work well. It is also seen that uncertainty in shear wave velocity can be ignored in case of limited soil-structure interaction, while uncertainty in Poisson’s ratio should be considered only when soil damping is sensitive to the Poisson’s ratio and there is significant soil-structure interaction.  相似文献   
9.
Chugh  Nisha  Kumar  Manoj  Haldar  Subhasis  Bhattacharya  Monika  Gupta  R.S. 《SILICON》2022,14(3):1029-1038
Silicon - In the present communication, for the first time, applicability of Field Plate (FP) for Double Channel (DC) AlGaN/GaNHEMT is demonstrated. Impact of design space parameters such as field...  相似文献   
10.
This paper presents physics based analytical model for center potential, electric field and subthreshold drain current of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM‐CSG). The expressions are derived from Poisson's equation in cylindrical co‐ordinate system based on parabolic potential approximation (PPA). The influence of technology parameter variations such as gate length, silicon pillar diameter and oxide thickness on electrical characteristics is studied in detail. Developed analytical model results are validated through the good agreement with simulated data obtained from ATLAS 3D simulator. Copyright © 2016 John Wiley & Sons, Ltd.  相似文献   
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